Boost your PC’s performance to new levels.You need the right expert for the right PC memory solution.Samsung is a leader in the DRAM market, with our DRAM being selected by most OEMs for many years.Embrace the cutting-edge Samsung DDR4 to take your PC to a new dimension of high speed and low energy performance.Improved bandwidth for high-end applications.With PC applications becoming more critical and complex, personal computing has set its toughest demands yet. PCs today need to provide exceptional speed to deliver the performance required.Samsung 2xnm DDR4 UDIMM and SODIMM enable initial bandwidth of 2,400 Mbps, which can achieve up to the JEDEC-defined 3,200 Mbps. DDR4 has 2 times higher bandwidth than DDR3.Complete multi-tasking with less energy.Consumers want to be able to rely on excellent battery power to complete their tasks. Samsung PC DRAM provides longer time unplugged through lower power consumption. This enables extended battery life for notebooks while maintaining high performance.Samsung DDR4 SODIMM and UDIMM consume less power with their unique 2xnm technology. Samsung’s 2xnm DDR4 operating at 1.2V achieves approximately 26% higher performance/watt compared to 2xnm DDR3 operating at 1.5V.Samsung also provides 2xnm LPDDR4 operating at 1.1V, achieving 37% increase in power efficiency than 2xnm LPDDR3 operating at 1.2V.Double your capacity with the world’s 1st 8Gb chips.The advancement in density has enabled Samsung to offer bigger capacity DRAM, delivering the faster data transmission speed that devices require today. PCs can benefit from high density DRAM by using fewer DRAM components, which leads to space saving.Samsung DDR4 UDIMM can achieve the max capacity of 128GB using the world’s 1st 8Gb chips, which is 2 times bigger than that of DDR3’s 64GB made of 4Gb chips.
First in the Market with Advanced DDR3.Double Data Rate Three, Synchronous DRAM, or DDR3, is the new generation of high performance, ultra-low-power memory interface technology used in high performance servers, desktops and notebooks. As the number one supplier in memory, Samsung continues to lead the industry with cutting-edge SDRAM products from the first DDR in 1997, DDR2 in 2001 and DDR3 in 2005. Samsung's high performance main memory solutions are based on JEDEC standards and leverage the company's leadership in advanced research and development of semiconductor process technology.Samsung's DDR3 brings new levels of performance to notebooks, desktops and servers and pushes the envelope in key areas like power consumption, speed and bandwidth. Our recent 30nm class, 1.35V, 2Gb DDR3 is the world's first ultra-low-power memory technology, with more than a 76% power savings over traditional DDR2 at 2x the bandwidth. When you're ready to make a move to DDR3 or are considering upgrading your systems, we're here to provide the best optimal solution for enhancing your competitive edge.
Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM products are found in computers - from ultra-mobile portables to powerful servers - and in a wide range of handheld devices such as smartphones and MP3 players. Samsung also delivers the industry’s widest line of storage products. These include optical and hard disk drives as well as flash storage, such as the all-flash Solid State Drive and a range of embedded and removable flash storage products.
The Samsung MZ1L21T9HCLS-00A07 is a high-performance 1.92TB enterprise-class NVMe solid state drive designed for data centers and mission-critical server environments. Built on Samsung’s proven flash technology, this SSD delivers fast, low-latency performance over the PCIe NVMe interface, making it ideal for workloads such as virtualization, cloud infrastructure, databases, and high-throughput enterprise applications.
The Samsung M321R4GA0EB2-CCP is a 32 GB DDR5-6400 MHz ECC Registered DIMM (RDIMM) built for enterprise and data-center class servers. It features Error-Correcting Code (ECC) and an integrated registered buffer that improve reliability, data integrity, and signal stability under heavy workloads — ideal for virtualization, database systems, cloud computing, and mission-critical environments. This module operates at ultra-fast DDR5-6400 (PC5-51200) speeds with a 1.1 V low-voltage design and uses a standard 288-pin DIMM form factor compatible with modern server platforms.
DRAM is a type of RAM (random access memory) used as the main memory in several computing devices, such as desktop and notebook computers, servers, and high-end workstations. It is the most widely used semiconductor memory used in current generation computers, and offers several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on various computing platforms, such as home/personal computers, portable computers, and network servers. This type of memory has undergone several innovative technological developments and offers very high price/performance ratios.Two types of DRAM are widely used for deployment in current generation servers: registered memory, and fully-buffered (FB) memory. Both these memory types are commercially available as DIMMs (dual inline memory modules). Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems. Fully-buffered DIMMs (or FB-DIMMs) are intended to be used in systems requiring higher memory densities with limited board space. As opposed to the parallel data transfer technique used in normal DRAM, FB-DIMMs transfer data in a serial format, using an additional buffer, known as advanced memory buffer (AMB) between the memory controller and the FB-DIMM modules. The AMB acts as an intermediary and handles all data reads/writes for the memory modules, taking care of issues such as signal degradation and error correction and reducing any overhead on the memory controller. Thus, FB-DIMMs prove to be a reliable alternative for deployment in server-grade machines.
*BTO item, 16-18 week lead time, needs approval from Samsung.** (Non-Samsung Display only) Set Back Box.
Proven DRAM module solution in the global marketSamsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
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